Toshiba UMOS9-H Silicon N-channel MOSFETs
These MOSFETs are suitable for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers. They boast a small gate charge, a small output charge, low drain-source on-resistance, and low leakage current.
Suitable for high-efficiency DC-to-DC converters, switching voltage regulators, and motor drivers.
These MOSFETs boast a small gate charge, a small output charge, low drain-source on-resistance, and low leakage current. The UMOS9-H N-channel MOSFETs feature 80V drain-source voltage, ±20V gate-source voltage, and 175°C channel temperature. These MOSFETs also feature ±0.1µA gate leakage current, 10µA drain cut-off current, and a -55°C to 175°C storage temperature range. The UMOS9-H N-channel MOSFETs are RoHS-compliant and come in a 0.108g 2-5W1A (SOP Advance (N)) package.
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These MOSFETs boast a small gate charge, a small output charge, low drain-source on-resistance, and low leakage current. The UMOS9-H N-channel MOSFETs feature 80V drain-source voltage, ±20V gate-source voltage, and 175°C channel temperature. These MOSFETs also feature ±0.1µA gate leakage current, 10µA drain cut-off current, and a -55°C to 175°C storage temperature range. The UMOS9-H N-channel MOSFETs are RoHS-compliant and come in a 0.108g 2-5W1A (SOP Advance (N)) package.
Features
- High-speed switching
- Small gate charge
- Small output charge
- Low drain-source on-resistance
- Low leakage current
Specifications
- 80V drain-source voltage
- ±20V gate-source voltage
- 175°C channel temperature
- ±0.1µA gate leakage current
- 10µA drain cut-off current
- -55°C to 175°C storage temperature range
Applications
- High-efficiency DC-to-DC converters
- Switching voltage regulators
- Motor drivers
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