Cissoid are a company that specializes in high temperature semiconductors. They have recently introduced the PLUTO power module capable of switching 60 A at 1200 V while operating within an impressive -55°C to +225°C temperature range.

The module contains two MOSFETs using Silicon Carbide technology primarily targeted at half-bridge applications where the two MOSFETs can individually handle 30 A continuously for both high side and low side switching. Wired in parallel the module can switch 60 A with a breakdown voltage in excess of 1200 V and an on resistance of 23 mΩ at 25°C and 50mΩ at 225°C with VGS=20V.

Low switching losses of the two SiC MOSFETs allow high frequency operation and integrated freewheel Schottky diodes reduce power dissipation in the device during dead time. The MOSFETs can be switched using a standard -5/+20 V gate signal.

CHT-PLUTO is available in a hermetically sealed 8-pin proprietary “HM8A” metal package measuring 18 x 29 mm excluding mounting tabs. The devices are electrically isolated from the case of the package. The package has a junction-to-case thermal resistance of 0.7°C/W for each 30A channel. Two additional source connections simplify gate driver wiring. Click here for more information.