| [Partner Content] 3.3 kV SiC MOSFETs and Schottky Barrier Diodes (SBDs) extend designers’ options for high-voltage power electronics in tran...
| [Partner Content] 3.3 kV SiC MOSFETs and Schottky Barrier Diodes (SBDs) extend designers’ options for high-voltage power electronics in tran...
| This is a submission from Rutronik on six silicon carbide MOSFETs of Rohm which are especially suitable for the energy efficient use in serv...
| This is a submission from Power Integrations on the SIC118xKQ SCALE-iDriver™. This is a high-efficiency, single-channel gate driver for sili...