COS/MOS is a development of bipolar C technology and an offspring of the MOS (Metal Oxide Semiconductor). It started with the MOSFET being developed from the universally known junction FET (Field Effect Transistor). The former distinguish themselves from the latter by their isolated gate. The result of this gate isolation is a particu- larly high gate resistance. A drawback is that a static charge can build up on such a gate when the transistor is not connected in a circuit. This charge usually causes the immediate destruc- tion of a MOSFET because the extre- mely thin isolating layer breaks down. So the handling of MOSFETs calls for special precautions. This also applies to COS/MOS ICs in which MOSFETs are integrated.
Downloading of this magazine article is reserved for registered users only.
Discussion (0 comments)